Temperature dependent analytical model for submicron GaAs-MESFET

MESFET are used in circuitsof gigahertz frequencies as they based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and transconductance a 0.3μm gate with temperature dependence is proposed. The validated by comparing the results proposed those numerical simulation. parameter values computed using an intrinsic two-dimensional geometry. In this work, distribution loads for varied applied voltages considered. Simulation obtainedunder variation effectsfor load driven voltage RMS average errors between models GaAs simulations calculated to evidence accuracy. This was demonstrated good agreement simulation results, which found agreement. obtained under variations were discussed complement literature. clarifies relevance suggested analytical.